Parametric results for: MRF174 under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

SOURCE 1

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

65 V 4

4 hits Apply

Drain Current-Max (ID) (1)

13 A 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 4

4 hits Apply

O-CRFM-F4 3 O-XRFM-F4 1

4 hits Apply

Manufacturer (4)

MACOM 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 TE Connectivity 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

200.0 °C 3

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 3 UNSPECIFIED 1

4 hits Apply

ROUND 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 1 Transferred 3

4 hits Apply

Yes 1

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

270 W 2

4 hits Apply

270 W 3

4 hits Apply

Power Gain-Min (Gp) (1)

9.0 dB 2

4 hits Apply

Surface Mount (2)

NO 3 YES 1

4 hits Apply