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MT41K256M16TW-107:P
Micron Technology Inc
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$6.6088 | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B96 | 95 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | FBGA-96 | not_compliant | EAR99 | 8542.32.00.36 | Micron | |||||||||||||||||
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MT41K256M16TW-093:P
Micron Technology Inc
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$6.7006 | Yes | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B96 | e1 | 95 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | TFBGA, | compliant | EAR99 | 8542.32.00.36 | Micron | |||||||||||||||
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MT41K256M16TW-107XIT:P
Micron Technology Inc
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Check for Price | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | R-PBGA-B96 | e1 | 85 °C | -40 °C | 96 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | BOTTOM | MICRON TECHNOLOGY INC | BGA, | compliant | EAR99 | 8542.32.00.36 | |||||||||||||||||||||||
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MT41K256M16TW-107:P/TR
Micron Technology Inc
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Check for Price | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | 934.5 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 147 µA | 1.45 V | 1.283 V | CMOS | OTHER | R-PBGA-B96 | e1 | 95 °C | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | , | unknown | EAR99 | 8542.32.00.36 | ||||||||||
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MT41K256M16TW-107AAT:P
Micron Technology Inc
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Check for Price | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | 934.57 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 147 µA | 1.45 V | 1.283 V | CMOS | INDUSTRIAL | R-PBGA-B96 | e1 | 105 °C | -40 °C | 260 | AEC-Q100 | 30 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.36 | |||||||
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MT41K256M16TW-107AT:P
Micron Technology Inc
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Check for Price | Obsolete | 4.295 Gbit | 16 | 256MX16 | 1.35 V | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | INDUSTRIAL | R-PBGA-B96 | 105 °C | -40 °C | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | FBGA-96 | compliant | EAR99 | 8542.32.00.36 | 2018-10-26 | ||||||||||||||||||||
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MT41K256M16TW-107IT:PTR
Micron Technology Inc
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Check for Price | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | 20 ns | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | R-PBGA-B96 | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | 8 X 14 MM, ROHS COMPLIANT, FBGA-96 | not_compliant | EAR99 | 8542.32.00.36 | |||||||||||||||||||
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MT41K256M16TW-107IT:P
Micron Technology Inc
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Check for Price | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | 20 ns | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.283 V | CMOS | R-PBGA-B96 | 260 | 30 | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | FBGA-96 | not_compliant | EAR99 | 8542.32.00.36 | Micron | ||||||||||||||||||
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MT41K256M16TW-107AUT:P
Micron Technology Inc
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Check for Price | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | 934.57 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 147 µA | 1.45 V | 1.283 V | CMOS | AUTOMOTIVE | R-PBGA-B96 | 125 °C | -40 °C | NOT SPECIFIED | AEC-Q100 | NOT SPECIFIED | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | TFBGA, | compliant | EAR99 | 8542.32.00.36 | Micron | |||||||
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MT41K256M16TW-107AIT:P
Micron Technology Inc
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Check for Price | Yes | Active | 4.295 Gbit | 16 | 256MX16 | 1.35 V | 934.57 MHz | 8192 | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 147 µA | 1.45 V | 1.283 V | CMOS | INDUSTRIAL | R-PBGA-B96 | 95 °C | -40 °C | 260 | AEC-Q100 | 30 | 96 | PLASTIC/EPOXY | TFBGA | BGA96,9X16,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 14 mm | 8 mm | MICRON TECHNOLOGY INC | TFBGA, | compliant | EAR99 | 8542.32.00.36 |