Parametric results for: MT49H32M18CHT-33 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

MULTI BANK PAGE BURST 4

4 hits Apply

Access Time-Max (2)

250 ps 2 20 ns 2

Min (ns) - Max (ns)

4 hits Apply

AUTO REFRESH 4

4 hits Apply

Clock Frequency-Max (fCLK) (1)

300 MHz 2

4 hits Apply

SEPARATE 2

4 hits Apply

2,4,8 2

4 hits Apply

R-PBGA-B144 4

4 hits Apply

e1 4

4 hits Apply

18.5 mm 4

4 hits Apply

Manufacturer (1)

Micron Technology Inc 4

4 hits Apply

Memory Density (1)

603.9798 Mbit 4

4 hits Apply

DDR DRAM 4

4 hits Apply

Memory Width (1)

18 4

4 hits Apply

1.0 4

4 hits Apply

1 4

4 hits Apply

144 4

4 hits Apply

33.5544 M 4

4 hits Apply

3.2E7 4

4 hits Apply

SYNCHRONOUS 4

4 hits Apply

70.0 °C 1 85.0 °C 2 95.0 °C 1

Min (°C) - Max (°C)

4 hits Apply

-40.0 °C 2 0.0 °C 2

Min (°C) - Max (°C)

4 hits Apply

Organization (1)

32MX18 4

4 hits Apply

3-STATE 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

TBGA 4

4 hits Apply

BGA144,12X18,40/32 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

GRID ARRAY, THIN PROFILE 4

4 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 4

4 hits Apply