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MT49H32M18FM-25E:B
Micron Technology Inc
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$38.2800 | No | Obsolete | 603.9798 Mbit | 18 | 32MX18 | 1.8 V | 15 ns | 400 MHz | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | COMMON | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | 2,4,8 | 55 mA | 655 µA | 1.9 V | 1.7 V | CMOS | COMMERCIAL | R-PBGA-B144 | Not Qualified | e0 | 70 °C | 144 | PLASTIC/EPOXY | TBGA | BGA144,12X18,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD SILVER | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | MICRON TECHNOLOGY INC | BGA | UBGA-144 | 144 | not_compliant | EAR99 | 8542.32.00.32 | |||||
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MT49H32M18FM-25E
Micron Technology Inc
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Check for Price | No | No | Obsolete | 603.9798 Mbit | 18 | 32MX18 | 1.8 V | 200 ps | 400 MHz | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | COMMON | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 48 mA | 819 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B144 | Not Qualified | e0 | 95 °C | 144 | PLASTIC/EPOXY | VBGA | BGA144,12X18,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | TIN LEAD SILVER | BALL | 1 mm | BOTTOM | 930 µm | 18.5 mm | 11 mm | MICRON TECHNOLOGY INC | BGA | 11 X 18.50 MM, MICRO, BGA-144 | 144 | not_compliant | EAR99 | 8542.32.00.32 | |||
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MT49H32M18FM-25E:A
Micron Technology Inc
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Check for Price | No | Obsolete | 603.9798 Mbit | 18 | 32MX18 | 1.8 V | 15 ns | 400 MHz | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | COMMON | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | 2,4,8 | 53 mA | 980 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B144 | Not Qualified | e0 | 95 °C | 144 | PLASTIC/EPOXY | TBGA | BGA144,12X18,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD SILVER | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | MICRON TECHNOLOGY INC | BGA | UBGA-144 | 144 | not_compliant | EAR99 | 8542.32.00.32 | |||||
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MT49H32M18FM-25EIT:A
Micron Technology Inc
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Check for Price | No | No | Obsolete | 603.9798 Mbit | 18 | 32MX18 | 1.8 V | 15 ns | 400 MHz | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | COMMON | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | 2,4,8 | 53 mA | 980 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B144 | Not Qualified | e0 | 85 °C | -40 °C | 144 | PLASTIC/EPOXY | TBGA | BGA144,12X18,40/32 | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD SILVER | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | MICRON TECHNOLOGY INC | BGA | UBGA-144 | 144 | not_compliant | EAR99 | 8542.32.00.32 | |||
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MT49H32M18FM-25EIT
Micron Technology Inc
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Check for Price | No | No | Obsolete | 603.9798 Mbit | 18 | 32MX18 | 1.8 V | 200 ps | 400 MHz | MULTI BANK PAGE BURST | DDR DRAM | AUTO/SELF REFRESH | COMMON | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 48 mA | 819 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B144 | Not Qualified | e0 | 85 °C | -40 °C | 144 | PLASTIC/EPOXY | VBGA | BGA144,12X18,40/32 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE | YES | TIN LEAD SILVER | BALL | 1 mm | BOTTOM | 930 µm | 18.5 mm | 11 mm | MICRON TECHNOLOGY INC | BGA | 11 X 18.50 MM, MICRO, BGA-144 | 144 | not_compliant | EAR99 | 8542.32.00.32 | ||
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MT49H32M18FM-25EIT:B
Micron Technology Inc
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Check for Price | Obsolete | 603.9798 Mbit | 18 | 32MX18 | 1.8 V | 15 ns | MULTI BANK PAGE BURST | DDR DRAM | AUTO REFRESH | 1 | 1 | 32000000 | 33.5544 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B144 | e0 | 85 °C | -40 °C | 144 | PLASTIC/EPOXY | TBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE | YES | TIN LEAD SILVER | BALL | 1 mm | BOTTOM | 1.2 mm | 18.5 mm | 11 mm | MICRON TECHNOLOGY INC | BGA | UBGA-144 | 144 | unknown | EAR99 | 8542.32.00.32 |