Parametric results for: N25Q128A43BF840F under Flash Memories

All Filters Clock Frequency-Max (fCLK) Endurance JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (1)

108 MHz 54

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100000.0 Write/Erase Cycles 54

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R-PBGA-B24 18 R-PDSO-G16 9 R-PDSO-N8 18 S-PDSO-G8 9

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5.285 mm 9 6 mm 9 8 mm 27 10.3 mm 9

Min (mm) - Max (mm)

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Manufacturer (1)

Micron Technology Inc 54

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Memory Density (1)

134.2177 Mbit 54

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FLASH 54

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Memory Width (1)

8 54

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1.0 54

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16 9 24 18 8 27

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16.7772 M 54

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1.6E7 54

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SYNCHRONOUS 54

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85.0 °C 36 125.0 °C 18

Min (°C) - Max (°C)

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-40.0 °C 54

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Organization (1)

16MX8 54

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3-STATE 54

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PLASTIC/EPOXY 54

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HVSON 18 SOP 18 TBGA 18

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BGA24,5X5,40 9 SOLCC8,.25 9 SOLCC8,.3 9 SOP16,.4 9 SOP8,.3 9

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RECTANGULAR 45 SQUARE 9

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GRID ARRAY, THIN PROFILE 18 SMALL OUTLINE 18 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 18

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Supply Voltage-Nom (Vsup) (1)

3 V 54

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