Parametric results for: NAND01GW4A3DZA6 under Flash Memories

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Manufacturer Part Number: nand01gw4a3dza6
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NAND01GW4A3DZA6F
STMicroelectronics
Check for Price Yes Transferred 1.0737 Gbit 16 64MX16 3 V 12 µs FLASH 1 64000000 67.1089 M ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL R-PBGA-B63 Not Qualified e1 85 °C -40 °C 63 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN SILVER COPPER BALL BOTTOM STMICROELECTRONICS BGA BGA, 63 compliant EAR99 8542.32.00.51
NAND01GW4A3DZA6E
Numonyx Memory Solutions
Check for Price Obsolete 1.0737 Gbit 16 64MX16 3 V 12 µs FLASH 1 64000000 67.1089 M ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL R-PBGA-B63 Not Qualified e1 85 °C -40 °C 260 NOT SPECIFIED 63 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) BALL BOTTOM NUMONYX BGA BGA, 63 unknown EAR99 8542.32.00.51
NAND01GW4A3DZA6F
Numonyx Memory Solutions
Check for Price Obsolete 1.0737 Gbit 16 64MX16 3 V 12 µs FLASH 1 64000000 67.1089 M ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL R-PBGA-B63 Not Qualified e1 85 °C -40 °C 260 NOT SPECIFIED 63 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) BALL BOTTOM NUMONYX BGA BGA, 63 unknown EAR99 8542.32.00.51
NAND01GW4A3DZA6T
STMicroelectronics
Check for Price No Transferred 1.0737 Gbit 16 64MX16 3 V 12 µs FLASH 1 64000000 67.1089 M ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL R-PBGA-B63 Not Qualified e0 85 °C -40 °C 63 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN LEAD BALL BOTTOM STMICROELECTRONICS BGA BGA, 63 compliant EAR99 8542.32.00.51
NAND01GW4A3DZA6
Numonyx Memory Solutions
Check for Price Obsolete 1.0737 Gbit 16 64MX16 3 V 12 µs FLASH 1 64000000 67.1089 M ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL R-PBGA-B63 Not Qualified e0 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 63 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN LEAD BALL BOTTOM NUMONYX BGA BGA, 63 unknown EAR99 8542.32.00.51
NAND01GW4A3DZA6
STMicroelectronics
Check for Price No Transferred 1.0737 Gbit 16 64MX16 3 V 12 µs FLASH 1 64000000 67.1089 M ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL R-PBGA-B63 Not Qualified e0 85 °C -40 °C 63 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN LEAD BALL BOTTOM STMICROELECTRONICS BGA BGA, 63 compliant EAR99 8542.32.00.51
NAND01GW4A3DZA6T
Numonyx Memory Solutions
Check for Price Obsolete 1.0737 Gbit 16 64MX16 3 V 12 µs FLASH 1 64000000 67.1089 M ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL R-PBGA-B63 Not Qualified e0 85 °C -40 °C NOT SPECIFIED NOT SPECIFIED 63 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN LEAD BALL BOTTOM NUMONYX BGA BGA, 63 unknown EAR99 8542.32.00.51
NAND01GW4A3DZA6E
STMicroelectronics
Check for Price Yes Transferred 1.0737 Gbit 16 64MX16 3 V 12 µs FLASH 1 64000000 67.1089 M ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL R-PBGA-B63 Not Qualified e1 85 °C -40 °C 63 PLASTIC/EPOXY BGA RECTANGULAR GRID ARRAY YES TIN SILVER COPPER BALL BOTTOM STMICROELECTRONICS BGA BGA, 63 compliant EAR99 8542.32.00.51