Parametric results for: NJVNJD35N04T4G under Power Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT) Collector Current-Max (IC) (1)

4 A 1

1 hit Apply

Collector-Emitter Voltage-Max (1)

350 V 1

1 hit Apply

Configuration (1)

DARLINGTON 1

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DC Current Gain-Min (hFE) (1)

300.0 1

1 hit Apply

R-PSSO-G2 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

onsemi 1

1 hit Apply

1 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

2 1

1 hit Apply

150.0 °C 1

1 hit Apply

-65.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Active 1

1 hit Apply

Yes 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

NPN 1

1 hit Apply

45 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply

Transition Frequency-Nom (fT) (1)

90 MHz 1

1 hit Apply