Parametric results for: PDTC1 under Small Signal Bipolar Transistors

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT IN BAIS RESISTOR RATIO IS 1 3 BUILT IN BAIS RESISTOR RATIO IS 4.7 1 BUILT IN BIAS RESISTANCE RATIO IS 0.21 3 BUILT IN BIAS RESISTANCE RATIO IS 0.47 4 BUILT IN BIAS RESISTANCE RATIO IS 1 233 BUILT IN BIAS RESISTANCE RATIO IS 10 20 BUILT IN BIAS RESISTANCE RATIO IS 2.1 9 BUILT IN BIAS RESISTANCE RATIO IS 21 30 BUILT IN BIAS RESISTANCE RATIO IS 4.5 3 BUILT IN BIAS RESISTANCE RATIO IS 4.7 34 BUILT IN BIAS RESISTOR 41 BUILT IN BIAS RESISTOR RATIO IS 0.47 2 BUILT IN BIAS RESISTOR RATIO IS 1 21 BUILT IN BIAS RESISTOR RATIO IS 10 4 BUILT IN BIAS RESISTOR RATIO IS 21 3 BUILT IN BIAS RESISTOR RATIO IS 4.5 10 BUILT IN BIAS RESISTOR RATIO IS 4.7 3 BUILT-IN BIAS RESISTANCE RATIO IS 0.21 20 BUILT-IN BIAS RESISTOR 107 BUILT-IN BIAS RESISTOR RATIO 4.5 12 BUILT-IN BIAS RESISTOR RATIO IS 0.47 37 BUILT-IN BIAS RESISTOR RATIO IS 1 87 BUILT-IN BIAS RESISTOR RATIO IS 10 12 BUILT-IN BIAS RESISTOR RATIO IS 2.1 62 BUILT-IN BIAS RESISTOR RATIO IS 2.13 3 BUILT-IN BIAS RESISTOR RATIO IS 2.14 12 BUILT-IN BIAS RESISTOR RATIO IS 21 1 BUILT-IN BIAS RESISTOR RATIO IS 21.36 12 BUILT-IN BIAS RESISTOR RATIO IS 21.37 1 BUILT-IN BIAS RESISTOR RATIO IS 4.7 8 BUILT-IN BIAS RESISTORS 42

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COLLECTOR 164

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Collector Current-Max (IC) (4)

20 mA 15 30 mA 5 50 mA 2 100 mA 1,004

Min (A) - Max (A)

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2.5 pF 16 3.5 pF 81

Min (pF) - Max (pF)

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Collector-Emitter Voltage-Max (1)

50 V 861

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Configuration (2)

SINGLE WITH BUILT-IN FET AND RESISTOR 1 SINGLE WITH BUILT-IN RESISTOR 860

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DC Current Gain-Min (hFE) (11)

20.0 8 30.0 229 35.0 44 40.0 30 50.0 54 56.0 15 60.0 117 68.0 16 80.0 152 100.0 266 200.0 109

Min - Max

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TO-236 69 TO-236AB 190 TO-92 51

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O-PBCY-T3 51 R-PBCC-N3 145 R-PDSO-F3 64 R-PDSO-G3 577 R-PDSO-N3 24

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e0 1 e3 885

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Manufacturer (3)

Nexperia 436 NXP Semiconductors 536 Philips Semiconductors 144

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1 529

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Number of Elements (1)

1 1,040

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Number of Terminals (1)

3 861

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150.0 °C 355

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-65.0 °C 22

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PLASTIC/EPOXY 861

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RECTANGULAR 810 ROUND 51

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CHIP CARRIER 145 CYLINDRICAL 51 SMALL OUTLINE 665

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Active 327 Not Recommended 1 Obsolete 259 Transferred 529

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Yes 156

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260 611 NOT SPECIFIED 158

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Polarity/Channel Type (1)

NPN 1,040

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150 mW 17 200 mW 4 250 mW 23

Min (W) - Max (W)

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200 µW 2 150 mW 90 200 mW 72 250 mW 246 500 mW 42

Min (W) - Max (W)

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Surface Mount (2)

NO 72 YES 968

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Transition Frequency-Nom (fT) (2)

100 MHz 33 230 MHz 132

Min (MHz) - Max (MHz)

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