Parametric results for: PHB2N50 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

FAST SWITCHING 1

6 hits Apply

82.0 mJ 2 100.0 mJ 1 130.0 mJ 1

Min (mJ) - Max (mJ)

6 hits Apply

DRAIN 4

6 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 4

6 hits Apply

DS Breakdown Voltage-Min (1)

500 V 4

6 hits Apply

Drain Current-Max (ID) (1)

2 A 6

6 hits Apply

Drain-source On Resistance-Max (1)

5 Ω 4

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PSSO-G2 4

6 hits Apply

e0 2

6 hits Apply

Manufacturer (2)

NXP Semiconductors 4 Philips Semiconductors 2

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

2 4

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

PLASTIC/EPOXY 4

6 hits Apply

RECTANGULAR 4

6 hits Apply

SMALL OUTLINE 4

6 hits Apply

Obsolete 4 Transferred 2

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

50 W 3

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply