Parametric results for: PMV56XN under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

20 V 4

5 hits Apply

Drain Current-Max (ID) (2)

2.5 A 4 3.76 A 1

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (1)

85 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-236AB 4

5 hits Apply

R-PDSO-G3 4

5 hits Apply

e3 5

5 hits Apply

Manufacturer (3)

Nexperia 2 NXP Semiconductors 2 Philips Semiconductors 1

5 hits Apply

1 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Obsolete 2 Transferred 3

5 hits Apply

Yes 1

5 hits Apply

260 5

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

830 mW 4

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply