Parametric results for: PMWD15UN under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

2 hits Apply

Drain Current-Max (ID) (2)

5 A 1 11.6 A 1

Min (A) - Max (A)

2 hits Apply

Drain-source On Resistance-Max (1)

20.5 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

MO-153 1

2 hits Apply

R-PDSO-G8 1

2 hits Apply

Manufacturer (2)

NXP Semiconductors 1 Philips Semiconductors 1

2 hits Apply

2 2

2 hits Apply

Number of Elements (1)

2 1

2 hits Apply

Number of Terminals (1)

8 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

2.3 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply