Parametric results for: PSMN4R6-100XS under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

673.0 mJ 2

4 hits Apply

ISOLATED 2

4 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

4 hits Apply

Drain Current-Max (ID) (1)

70.4 A 3

4 hits Apply

Drain-source On Resistance-Max (1)

4.6 mΩ 2

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

TO-220AB 2

4 hits Apply

R-PSFM-T3 2

4 hits Apply

Manufacturer (2)

Nexperia 2 NXP Semiconductors 2

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 2

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

175.0 °C 1

4 hits Apply

PLASTIC/EPOXY 2

4 hits Apply

RECTANGULAR 2

4 hits Apply

FLANGE MOUNT 2

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

63.8 W 1

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply