Parametric results for: PSMN4R8-100BSEJ under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

542.0 mJ 1

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

100 V 1

2 hits Apply

Drain Current-Max (ID) (1)

120 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

4.8 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

643 pF 1

2 hits Apply

R-PSSO-G2 1

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Nexperia 1 NXP Semiconductors 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

175.0 °C 1

2 hits Apply

-55.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 1 Transferred 1

2 hits Apply

245 1 260 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

405 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply