Parametric results for: QS8J1 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

12 V 6

6 hits Apply

Drain Current-Max (ID) (3)

3.5 A 2 4.5 A 3 5.5 A 1

Min (A) - Max (A)

6 hits Apply

Drain-source On Resistance-Max (3)

22 mΩ 1 29 mΩ 3 43 mΩ 2

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

R-PDSO-F8 6

6 hits Apply

e2 4

6 hits Apply

Manufacturer (1)

ROHM Semiconductor 6

6 hits Apply

1 4

6 hits Apply

Number of Elements (1)

2 6

6 hits Apply

Number of Terminals (1)

8 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 3

6 hits Apply

PLASTIC/EPOXY 6

6 hits Apply

RECTANGULAR 6

6 hits Apply

SMALL OUTLINE 6

6 hits Apply

Active 3 Not Recommended 2 Obsolete 1

6 hits Apply

Yes 3

6 hits Apply

260 4

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 6

6 hits Apply

1.5 W 3

6 hits Apply

Surface Mount (1)

YES 6

6 hits Apply