Parametric results for: RFD10P03L under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 3 LOGIC LEVEL COMPATIBLE 1 MEGAFET 2

9 hits Apply

DRAIN 9

9 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 9

9 hits Apply

DS Breakdown Voltage-Min (1)

30 V 9

9 hits Apply

Drain Current-Max (ID) (1)

10 A 9

9 hits Apply

Drain-source On Resistance-Max (2)

200 mΩ 4 220 mΩ 5

Min (Ω) - Max (Ω)

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

TO-251AA 3 TO-252AA 6

9 hits Apply

R-PSIP-T3 3 R-PSSO-G2 6

9 hits Apply

e0 7

9 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 Harris Semiconductor 3 Intersil Corporation 3

9 hits Apply

Number of Elements (1)

1 9

9 hits Apply

Number of Terminals (2)

2 6 3 3

9 hits Apply

ENHANCEMENT MODE 9

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175.0 °C 7

9 hits Apply

PLASTIC/EPOXY 9

9 hits Apply

RECTANGULAR 9

9 hits Apply

IN-LINE 3 SMALL OUTLINE 6

9 hits Apply

Obsolete 7 Transferred 2

9 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 9

9 hits Apply

60 W 3

9 hits Apply

60 W 4 65 W 3

Min (W) - Max (W)

9 hits Apply

Surface Mount (2)

NO 3 YES 6

9 hits Apply