Parametric results for: RN2107FV under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT-IN BIAS RESISTANCE RATIO IS 4.7 1

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Collector Current-Max (IC) (1)

100 mA 1

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Collector-Emitter Voltage-Max (1)

50 V 1

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Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 1

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DC Current Gain-Min (hFE) (1)

80.0 1

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O-PBCY-T3 1

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Manufacturer (1)

Toshiba America Electronic Components 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

3 1

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150.0 °C 1

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PLASTIC/EPOXY 1

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ROUND 1

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CYLINDRICAL 1

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Active 1

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NOT SPECIFIED 1

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Polarity/Channel Type (1)

PNP 1

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150 mW 1

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Surface Mount (1)

NO 1

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Transition Frequency-Nom (fT) (1)

200 MHz 1

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