Parametric results for: S71WS256ND0BAWE30 under Other Memory ICs

All Filters Access Time-Max Additional Feature JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Mixed Memory Type Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Time-Max (1)

80 ns 1

3 hits Apply

PSRAM IS ORGANIZED AS 8M X 16BIT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE 1

3 hits Apply

R-PBGA-B84 2

3 hits Apply

e0 1

3 hits Apply

12 mm 1

3 hits Apply

Manufacturer (3)

AMD 1 Cypress Semiconductor 1 Spansion 1

3 hits Apply

Memory Density (1)

268.4355 Mbit 1

3 hits Apply

MEMORY CIRCUIT 2

3 hits Apply

Memory Width (1)

16 1

3 hits Apply

FLASH+PSRAM 2

3 hits Apply

1.0 1

3 hits Apply

84 2

3 hits Apply

16.7772 M 1

3 hits Apply

1.6E7 1

3 hits Apply

ASYNCHRONOUS 1

3 hits Apply

85.0 °C 2

3 hits Apply

-25.0 °C 2

3 hits Apply

Organization (1)

16MX16 1

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

FBGA 1 TFBGA 1

3 hits Apply

BGA84,10X12,32 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

GRID ARRAY, FINE PITCH 1 GRID ARRAY, THIN PROFILE, FINE PITCH 1

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.8 V 2

3 hits Apply