Parametric results for: SIHFR1N60A-GE3 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology Manufacturer Number of Elements Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 1

1 hit Apply

Drain Current-Max (ID) (1)

1.4 A 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

Manufacturer (1)

Vishay Intertechnologies 1

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Number of Elements (1)

1 1

1 hit Apply

150.0 °C 1

1 hit Apply

Active 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

36 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply