Parametric results for: SPB10N10 G under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 1 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 1

3 hits Apply

60.0 mJ 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 3

3 hits Apply

Drain Current-Max (ID) (1)

10.3 A 3

3 hits Apply

Drain-source On Resistance-Max (2)

170 mΩ 1 210 mΩ 2

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-263AB 3

3 hits Apply

R-PSSO-G2 3

3 hits Apply

e0 2

3 hits Apply

Manufacturer (1)

Infineon Technologies AG 3

3 hits Apply

1 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Obsolete 3

3 hits Apply

220 1 245 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

50 W 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply