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Parametric » Diodes » Varactors

Parametric results for: SQ1219B under Varactors

Select parts from the table below to compare.

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Select Parts		Part Number

		SQ1219B Spectrum Control
		SQ1219B Msi Electronics Inc
		SQ1219BCHIP Spectrum Control
		SQ1219BCHIP Msi Electronics Inc

		Most Relevant										Technical							Compliance		Operating Conditions	Physical							Other
Composite Price	Part Life Cycle Code	Diode Capacitance-Nom	Reverse Current-Max	Power Dissipation-Max	Diode Element Material	Breakdown Voltage-Min	Diode Type	Configuration	Surface Mount	Rep Pk Reverse Voltage-Max	Number of Elements	Additional Feature	Diode Cap Tolerance	Diode Capacitance Ratio-Min	Frequency Band	Quality Factor-Min	Reverse Test Voltage	Variable Capacitance Diode Classification	Qualification Status	JESD-30 Code	Operating Temperature-Max	Case Connection	Number of Terminals	Package Body Material	Package Shape	Package Style	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

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Obsolete

5.6 pF

20 nA

250 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

NO

30 V

1

VERY HIGH Q

5 %

2.6

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1000

25 V

ABRUPT

Not Qualified

O-LALF-W2

175 °C

ISOLATED

2

GLASS

ROUND

LONG FORM

WIRE

AXIAL

API TECHNOLOGIES CORP

DO-7

O-LALF-W2

2

compliant

EAR99

8541.10.00.80

Check for Price

Obsolete

5.6 pF

0.02 pA

250 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

NO

30 V

1

VERY HIGH Q

5 %

2.6

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1000

25 V

ABRUPT

Not Qualified

O-LALF-W2

175 °C

ISOLATED

2

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MSI ELECTRONICS INC

O-LALF-W2

unknown

EAR99

8541.10.00.80

Check for Price

Obsolete

5.6 pF

20 nA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

1

VERY HIGH Q

5 %

2.6

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1000

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

API TECHNOLOGIES CORP

DIE

X-XUUC-N

compliant

EAR99

8541.10.00.40

Check for Price

Obsolete

5.6 pF

20 nA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

1

VERY HIGH Q

5 %

2.6

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1000

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

MSI ELECTRONICS INC

X-XUUC-N

unknown

EAR99

8541.10.00.40

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Spectrum Control

Check for Price

Obsolete

5.6 pF

20 nA

250 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

NO

30 V

1

VERY HIGH Q

5 %

2.6

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1000

25 V

ABRUPT

Not Qualified

O-LALF-W2

175 °C

ISOLATED

2

GLASS

ROUND

LONG FORM

WIRE

AXIAL

API TECHNOLOGIES CORP

DO-7

O-LALF-W2

2

compliant

EAR99

8541.10.00.80

Msi Electronics Inc

Check for Price

Obsolete

5.6 pF

0.02 pA

250 mW

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

NO

30 V

1

VERY HIGH Q

5 %

2.6

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1000

25 V

ABRUPT

Not Qualified

O-LALF-W2

175 °C

ISOLATED

2

GLASS

ROUND

LONG FORM

WIRE

AXIAL

MSI ELECTRONICS INC

O-LALF-W2

unknown

EAR99

8541.10.00.80

Spectrum Control

Check for Price

Obsolete

5.6 pF

20 nA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

1

VERY HIGH Q

5 %

2.6

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1000

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

API TECHNOLOGIES CORP

DIE

X-XUUC-N

compliant

EAR99

8541.10.00.40

Msi Electronics Inc

Check for Price

Obsolete

5.6 pF

20 nA

SILICON

30 V

VARIABLE CAPACITANCE DIODE

SINGLE

YES

30 V

1

VERY HIGH Q

5 %

2.6

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1000

25 V

ABRUPT

Not Qualified

X-XUUC-N

175 °C

UNSPECIFIED

UNSPECIFIED

UNCASED CHIP

NO LEAD

UPPER

MSI ELECTRONICS INC

X-XUUC-N

unknown

EAR99

8541.10.00.40