Parametric results for: SSM6J801R under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

20 V 3

3 hits Apply

Drain Current-Max (ID) (1)

6 A 3

3 hits Apply

Drain-source On Resistance-Max (1)

32.5 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

99 pF 3

3 hits Apply

R-PDSO-F6 3

3 hits Apply

Manufacturer (1)

Toshiba America Electronic Components 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

6 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 3

3 hits Apply

NOT SPECIFIED 3

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

1.5 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply