Parametric results for: SUD50N02-06 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

101.0 mJ 1

3 hits Apply

DRAIN 1

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

3 hits Apply

Drain Current-Max (ID) (1)

26 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

6 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-252 1

3 hits Apply

R-PSSO-G2 1

3 hits Apply

e0 1 e3 1

3 hits Apply

Manufacturer (1)

Vishay Intertechnologies 3

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 1

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

SMALL OUTLINE 1

3 hits Apply

Obsolete 3

3 hits Apply

260 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

65 W 2 100 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply