Parametric results for: TSM1N45CWRP under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

108.0 mJ 1

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

450 V 1

2 hits Apply

Drain Current-Max (ID) (1)

500 mA 1

2 hits Apply

Drain-source On Resistance-Max (1)

4.25 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

R-PDSO-G4 1

2 hits Apply

Manufacturer (1)

Taiwan Semiconductor 2

2 hits Apply

3 1

2 hits Apply

Number of Elements (1)

1 1

2 hits Apply

Number of Terminals (1)

4 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply