Parametric results for: apt5010lvr under Power Field-Effect Transistors

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Manufacturer Part Number: apt5010lvr
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APT5010LVRG
Microchip Technology Inc
$18.5936 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 47 A 100 mΩ 2500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 188 A SWITCHING SILICON TO-264AA R-PSFM-T3 e1 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT Tin/Silver/Copper (Sn/Ag/Cu) THROUGH-HOLE SINGLE MICROCHIP TECHNOLOGY INC TO-264, 3 PIN compliant EAR99
APT5010LVR
Advanced Power Technology
Check for Price No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 47 A 100 mΩ 2500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 420 W 188 A SWITCHING SILICON TO-264AA R-PSFM-T3 e0 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN LEAD THROUGH-HOLE SINGLE ADVANCED POWER TECHNOLOGY INC FLANGE MOUNT, R-PSFM-T3 unknown EAR99
APT5010LVRG
Microsemi Corporation
Check for Price Yes Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 47 A 100 mΩ 2500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 188 A SWITCHING SILICON TO-264AA R-PSFM-T3 e1 Not Qualified 150 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN SILVER COPPER THROUGH-HOLE SINGLE MICROSEMI CORP TO-264, 3 PIN compliant EAR99 TO-264AA 3 Microsemi Corporation
APT5010LVR
Microsemi Corporation
Check for Price No No Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 500 V 1 47 A 100 mΩ 2500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 188 A SWITCHING SILICON TO-264AA R-PSFM-T3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE MICROSEMI CORP TO-264, 3 PIN unknown EAR99 TO-264AA 3