Parametric results for: bf998r) under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW NOISE 1

11 hits Apply

SOURCE 1

11 hits Apply

Configuration (2)

SINGLE 10 SINGLE WITH BUILT-IN DIODE 1

11 hits Apply

DS Breakdown Voltage-Min (1)

12 V 1

11 hits Apply

Drain Current-Max (ID) (1)

30 mA 11

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 1

11 hits Apply

R-PDSO-G4 1

11 hits Apply

e0 5 e3 2

11 hits Apply

Manufacturer (5)

Infineon Technologies AG 2 North American Philips Discrete Products Div 1 NXP Semiconductors 2 Philips Semiconductors 2 Telefunken Microelectronics Gmbh 4

11 hits Apply

1 1

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

4 1

11 hits Apply

DEPLETION MODE 3 DUAL GATE, DEPLETION MODE 8

11 hits Apply

150.0 °C 11

11 hits Apply

PLASTIC/EPOXY 1

11 hits Apply

RECTANGULAR 1

11 hits Apply

SMALL OUTLINE 1

11 hits Apply

Obsolete 4 Transferred 7

11 hits Apply

260 5

11 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 11

11 hits Apply

200 mW 11

11 hits Apply

Surface Mount (1)

YES 11

11 hits Apply