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BSD316SNH6327XTSA1
Infineon Technologies AG
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$0.1537 | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 30 V | 1 | 1.4 A | 1.6 mΩ | AVALANCHE RATED | 7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | 500 mW | SILICON | R-PDSO-G6 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G6 | compliant | EAR99 | 8541.21.00.95 | Infineon | ||||
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BSD316SNH6327
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 30 V | 1 | 1.4 A | 160 mΩ | AVALANCHE RATED | 7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | 500 mW | SILICON | R-PDSO-G6 | AEC-Q101 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOT-363, 6 PIN | compliant | EAR99 | 8541.21.00.95 | |||||||||
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BSS127L-AE3-R
Unisonic Technologies Co Ltd
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 21 mA | 600 Ω | 1.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | UNISONIC TECHNOLOGIES CO LTD | , | compliant | EAR99 | ||||||||||||||
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BSS127L-AE2-R
Unisonic Technologies Co Ltd
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 21 mA | 600 Ω | 1.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | UNISONIC TECHNOLOGIES CO LTD | compliant | EAR99 | ||||||||||||||
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BSS127G-AE2-R
Unisonic Technologies Co Ltd
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 21 mA | 600 Ω | 1.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | 300 mW | SWITCHING | SILICON | TO-236 | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | UNISONIC TECHNOLOGIES CO LTD | compliant | EAR99 | ||||||||||||||
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BSS127G-AE3-R
Unisonic Technologies Co Ltd
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 21 mA | 600 Ω | 1.5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 300 mW | 300 mW | SWITCHING | SILICON | R-PDSO-G3 | 150 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | UNISONIC TECHNOLOGIES CO LTD | , | compliant | EAR99 | ||||||||||||||
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BSD316SN
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 6 | 30 V | 1 | 1.4 A | 160 mΩ | AVALANCHE RATED | 7 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 500 mW | 500 mW | SILICON | R-PDSO-G6 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SMALL OUTLINE, R-PDSO-G6 | compliant | EAR99 | 8541.21.00.95 |