Parametric results for: gan transistors under Power Field-Effect Transistors

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Manufacturer: GaN Systems
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GS66502B-E01-MR
GaN Systems
Check for Price Yes Obsolete N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS-065-011-1-L-MR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 8 650 V 1 11 A 190 mΩ 0.4 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 19 A SWITCHING GALLIUM NITRIDE R-PDSO-N8 3 150 °C -55 °C 260 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE NO LEAD DUAL GAN SYSTEMS INC compliant EAR99 GaN Systems
GS66502B-TR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66502B-MR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66504B-MR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 15 A 130 mΩ 1.1 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 30 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66508B-TR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 4 650 V VERY HIGH FREQUENCY BAND 1 30 A 63 mΩ 1.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 60 A SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 3 150 °C -55 °C 260 30 SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) - with Nickel (Ni) barrier NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66508P-MR
GaN Systems
Check for Price Yes Contact Manufacturer P-CHANNEL YES SINGLE 4 650 V 1 63 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 72 A SWITCHING SILICON R-PBCC-N4 e4 3 -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR CHIP CARRIER Gold (Au) - with Nickel (Ni) barrier NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66516T-E02-MR
GaN Systems
Check for Price Yes Obsolete N-CHANNEL YES SINGLE 4 650 V 1 60 A 32 mΩ 5.9 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 120 A SWITCHING GALLIUM NITRIDE R-PDSO-N4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GOLD OVER NICKEL NO LEAD DUAL GAN SYSTEMS INC unknown EAR99 GaN Systems SMALL OUTLINE, R-PDSO-N4
GS66508B-MR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 4 650 V VERY HIGH FREQUENCY BAND 1 30 A 63 mΩ 1.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 60 A SWITCHING GALLIUM NITRIDE R-XBCC-N4 e4 3 150 °C -55 °C 260 30 SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) - with Nickel (Ni) barrier NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66508P-TR
GaN Systems
Check for Price Yes Contact Manufacturer P-CHANNEL YES SINGLE 4 650 V 1 63 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 72 A SWITCHING SILICON R-PBCC-N4 e4 3 -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR CHIP CARRIER Gold (Au) - with Nickel (Ni) barrier NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems