Parametric results for: gs66508t-mr under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

SOURCE 1

1 hit Apply

Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

650 V 1

1 hit Apply

Drain Current-Max (ID) (1)

30 A 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 1

1 hit Apply

R-XBCC-N4 1

1 hit Apply

e4 1

1 hit Apply

Manufacturer (1)

GaN Systems 1

1 hit Apply

3 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

4 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

UNSPECIFIED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

CHIP CARRIER 1

1 hit Apply

Contact Manufacturer 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply