Parametric results for: hat-30 under Power Field-Effect Transistors

All Filters Additional Feature Attenuation-Nom Characteristic Impedance Construction Input Power-Max (CW) JESD-30 Code JESD-609 Code Manufacturer Mounting Feature Number of Elements Number of Terminals Operating Frequency-Max Operating Frequency-Min Operating Temperature-Max Operating Temperature-Min RF/Microwave Device Type Surface Mount VSWR-Max

AVALANCHE RATED 2 BNC-F; BNC-M 1 BNC-F; BNC-M, USABLE TO 4000 MHZ 2

35 hits Apply

Attenuation-Nom (1)

30.0 dB 3

35 hits Apply

Characteristic Impedance (1)

50 Ω 3

35 hits Apply

COAXIAL 3

35 hits Apply

Input Power-Max (CW) (1)

30.0 dBm 3

35 hits Apply

R-PDSO-G8 26

35 hits Apply

e0 1

35 hits Apply

Manufacturer (3)

Hitachi Ltd 7 Mini-Circuits 3 Renesas Electronics Corporation 25

35 hits Apply

PANEL MOUNT 1

35 hits Apply

2 21

35 hits Apply

8 26

35 hits Apply

Operating Frequency-Max (1)

2 GHz 3

35 hits Apply

0.0 MHz 3

35 hits Apply

100.0 °C 3 150.0 °C 24

Min (°C) - Max (°C)

35 hits Apply

-45.0 °C 3

35 hits Apply

RF/Microwave Device Type (1)

FIXED ATTENUATOR 3

35 hits Apply

Surface Mount (2)

NO 1 YES 28

35 hits Apply

VSWR-Max (2)

1.15 2 1.4 1

Min - Max

35 hits Apply