Parametric results for: irf+540 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 17 AVALANCHE RATED, HIGH RELIABILITY 2 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 32 AVALANCHE RATED, ULTRA LOW ON-RESISTANCE, HIGH RELIABILITY 1 AVALANCHE RATED, ULTRA-LOW RESISTANCE 1 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY 8 FAST SWITCHING 1 HIGH RELIABILITY 2 LEADFORM OPTIONS ARE AVAILABLE 3 ULTRA LOW RESISTANCE 1

264 hits Apply

83.0 mJ 10 120.0 mJ 15 185.0 mJ 23 220.0 mJ 1 230.0 mJ 71 365.0 mJ 3 523.0 mJ 4

Min (mJ) - Max (mJ)

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DRAIN 222 ISOLATED 1

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Configuration (3)

SINGLE 173 Single 1 SINGLE WITH BUILT-IN DIODE 88

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DS Breakdown Voltage-Min (2)

80 V 1 100 V 251

Min (V) - Max (V)

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Drain Current-Max (Abs) (ID) (1)

28 A 1

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Drain Current-Max (ID) (9)

16 A 1 17 A 1 22 A 1 23 A 7 27 A 68 28 A 124 30 A 2 33 A 28 36 A 25

Min (A) - Max (A)

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Drain-source On Resistance-Max (7)

26.5 mΩ 25 40 mΩ 2 44 mΩ 23 52 mΩ 68 70 mΩ 3 77 mΩ 121 85 mΩ 1

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 263

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100 pF 3 120 pF 2 200 pF 1 300 pF 2

Min (pF) - Max (pF)

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TO-220AB 185 TO-262AA 8 TO-263 2 TO-263AB 29

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R-PSFM-T3 189 R-PSIP-T3 8 R-PSSO-G2 45 S-XUUC-N2 1

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e0 85 e3 113

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Manufacturer (26)

Fairchild Semiconductor Corporation 6 FCI Semiconductor 1 Freescale Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 2 Infineon Technologies AG 55 International Rectifier 109 Intersil Corporation 3 Microsemi Corporation 1 Motorola Mobility LLC 17 Motorola Semiconductor Products 17 National Semiconductor Corporation 2 New Jersey Semiconductor Products Inc 9 NXP Semiconductors 6 onsemi 1 Philips Semiconductors 2 Rochester Electronics LLC 2 Samsung Semiconductor 2 Semiconductor Technology Inc 1 STMicroelectronics 3 Texas Instruments 2 Thomson Consumer Electronics 2 TT Electronics Power and Hybrid / Semelab Limited 1 TT Electronics Resistors 1 Vishay Intertechnologies 11 Vishay Siliconix 6

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1 38 NOT APPLICABLE 1 NOT SPECIFIED 1

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Number of Elements (1)

1 261

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Number of Terminals (2)

2 46 3 197

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ENHANCEMENT MODE 263

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150.0 °C 20 175.0 °C 106

Min (°C) - Max (°C)

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-55.0 °C 10

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PLASTIC/EPOXY 242 UNSPECIFIED 1

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RECTANGULAR 242 SQUARE 1

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FLANGE MOUNT 189 IN-LINE 8 SMALL OUTLINE 45 UNCASED CHIP 1

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Active 24 Contact Manufacturer 4 End Of Life 2 Not Recommended 1 Obsolete 127 Transferred 106

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No 52 Yes 59

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225 10 235 1 240 1 250 4 260 22 NOT SPECIFIED 15

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Polarity/Channel Type (1)

N-CHANNEL 263

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40 W 1 94 W 34 115 W 2 125 W 36 150 W 47

Min (W) - Max (W)

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40 W 1 91 W 3 92 W 19 94 W 4 100 W 1 107 W 2 120 W 3 130 W 10 150 W 34

Min (W) - Max (W)

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Surface Mount (2)

NO 207 YES 47

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