Parametric results for: irf1405z under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 21 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY 7

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250.0 mJ 2 270.0 mJ 8 420.0 mJ 14 810.0 mJ 7

Min (mJ) - Max (mJ)

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DRAIN 29

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Configuration (1)

SINGLE WITH BUILT-IN DIODE 31

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DS Breakdown Voltage-Min (1)

55 V 31

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Drain Current-Max (ID) (3)

75 A 15 120 A 9 150 A 7

Min (A) - Max (A)

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Drain-source On Resistance-Max (1)

4.9 mΩ 31

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METAL-OXIDE SEMICONDUCTOR 31

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TO-220AB 4 TO-262AA 4 TO-263AB 14 TO-263CA 1

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R-PSFM-T3 4 R-PSIP-T3 4 R-PSIP-T7 2 R-PSSO-G2 14 R-PSSO-G6 7

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e0 10 e3 17

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Manufacturer (2)

Infineon Technologies AG 16 International Rectifier 25

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1 26

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Number of Elements (1)

1 31

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Number of Terminals (4)

2 14 3 8 6 7 7 2

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ENHANCEMENT MODE 31

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150.0 °C 3 175.0 °C 24

Min (°C) - Max (°C)

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PLASTIC/EPOXY 31

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RECTANGULAR 31

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FLANGE MOUNT 4 IN-LINE 6 SMALL OUTLINE 21

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Active 2 Not Recommended 2 Obsolete 23 Transferred 14

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No 2 Yes 12

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225 3 250 1 260 9 NOT SPECIFIED 10

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Polarity/Channel Type (1)

N-CHANNEL 31

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230 W 25

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Surface Mount (2)

NO 10 YES 21

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