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K4B2G0846D-HCK0
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 2.1475 Gbit | 8 | 256MX8 | 1.5 V | 225 ps | 800 MHz | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 140 µA | 1.575 V | 1.425 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | 85 °C | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.36 | ||||||||||
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K4B2G0846C-HYF8
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 2.1475 Gbit | 8 | 256MX8 | 1.35 V | MULTI BANK PAGE BURST | DDR3L DRAM | AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | YES | 1.45 V | 1.2825 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | 3 | 85 °C | 260 | 78 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.36 | BGA | TFBGA, | 78 | ||||||||||||||
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K4B2G0846E-MCH9
Samsung Semiconductor
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Check for Price | Obsolete | DDR DRAM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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K4B2G0446C-HCF80
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 2.1475 Gbit | 4 | 512MX4 | 1.5 V | 300 ps | 533 MHz | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | 3-STATE | YES | 8 | 12 mA | 160 µA | 1.575 V | 1.425 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | e1 | 3 | 85 °C | 260 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.36 | BGA | TFBGA, BGA78,9X13,32 | 78 | ||
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K4B2G0446D-HCF8
Samsung Semiconductor
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Check for Price | Yes | Active | 2.1475 Gbit | 4 | 512MX4 | 1.5 V | 300 ps | 533 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 512000000 | 536.8709 M | 3-STATE | 8 | 12 mA | 105 µA | CMOS | OTHER | R-PBGA-B78 | Not Qualified | 85 °C | 78 | PLASTIC/EPOXY | FBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.36 | FBGA, BGA78,9X13,32 | ||||||||||||||||||||
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K4B2G0446C-HCF70
Samsung Semiconductor
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Check for Price | Yes | Yes | Obsolete | 2.1475 Gbit | 4 | 512MX4 | 1.5 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR3 DRAM | AUTO/SELF REFRESH | COMMON | 8 | 1 | 1 | 512000000 | 536.8709 M | SYNCHRONOUS | 3-STATE | YES | 8 | 1.575 V | 1.425 V | CMOS | OTHER | R-PBGA-B78 | Not Qualified | e1 | 3 | 85 °C | 260 | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.36 | BGA | TFBGA, BGA78,9X13,32 | 78 | ||||
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K4B2G0846A
Samsung Semiconductor
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Check for Price | Obsolete | DDR DRAM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
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K4B2G0446B-HCF8T
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 2.1475 Gbit | 4 | 512MX4 | 1.5 V | 300 ps | 533 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 512000000 | 536.8709 M | 3-STATE | 8 | 12 mA | 210 µA | CMOS | OTHER | R-PBGA-B78 | Not Qualified | e1 | 3 | 85 °C | 260 | 78 | PLASTIC/EPOXY | FBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | unknown | EAR99 | 8542.32.00.36 | |||||||||||||||||
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K4B2G0846E
Samsung Semiconductor
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Check for Price | Obsolete | 2.1475 Gbit | 8 | 256MX8 | 1.5 V | MULTI BANK PAGE BURST | DDR3 DRAM | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | CMOS | R-PBGA-B78 | 85 °C | 78 | PLASTIC/EPOXY | TFBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 11 mm | 7.5 mm | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.36 | ||||||||||||||||||||||||||
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K4B2G0446D-HCK0T
Samsung Semiconductor
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Check for Price | Yes | Active | 2.1475 Gbit | 4 | 512MX4 | 1.5 V | 225 ps | 800 MHz | 8192 | DDR3 DRAM | COMMON | 8 | 512000000 | 536.8709 M | 3-STATE | 8 | 12 mA | 130 µA | CMOS | OTHER | R-PBGA-B78 | Not Qualified | 85 °C | 78 | PLASTIC/EPOXY | FBGA | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | SAMSUNG SEMICONDUCTOR INC | compliant | EAR99 | 8542.32.00.36 | FBGA, BGA78,9X13,32 |