Parametric results for: k4b2g0 under DRAMs

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Manufacturer Part Number: k4b2g0
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K4B2G0846D-HCK0
Samsung Semiconductor
Check for Price Yes Obsolete 2.1475 Gbit 8 256MX8 1.5 V 225 ps 800 MHz 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 8 1 1 256000000 268.4355 M SYNCHRONOUS 3-STATE YES 8 12 mA 140 µA 1.575 V 1.425 V CMOS OTHER R-PBGA-B78 Not Qualified 85 °C 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 11 mm 7.5 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.36
K4B2G0846C-HYF8
Samsung Semiconductor
Check for Price Yes Yes Obsolete 2.1475 Gbit 8 256MX8 1.35 V MULTI BANK PAGE BURST DDR3L DRAM AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY 1 1 256000000 268.4355 M SYNCHRONOUS YES 1.45 V 1.2825 V CMOS OTHER R-PBGA-B78 Not Qualified 3 85 °C 260 78 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY YES BALL 800 µm BOTTOM 1.2 mm 11 mm 7.5 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.36 BGA TFBGA, 78
K4B2G0846E-MCH9
Samsung Semiconductor
Check for Price Obsolete DDR DRAM SAMSUNG SEMICONDUCTOR INC unknown EAR99
K4B2G0446C-HCF80
Samsung Semiconductor
Check for Price Yes Yes Obsolete 2.1475 Gbit 4 512MX4 1.5 V 300 ps 533 MHz 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 8 1 1 512000000 536.8709 M SYNCHRONOUS 3-STATE YES 8 12 mA 160 µA 1.575 V 1.425 V CMOS OTHER R-PBGA-B78 Not Qualified e1 3 85 °C 260 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 11 mm 7.5 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.36 BGA TFBGA, BGA78,9X13,32 78
K4B2G0446D-HCF8
Samsung Semiconductor
Check for Price Yes Active 2.1475 Gbit 4 512MX4 1.5 V 300 ps 533 MHz 8192 DDR3 DRAM COMMON 8 512000000 536.8709 M 3-STATE 8 12 mA 105 µA CMOS OTHER R-PBGA-B78 Not Qualified 85 °C 78 PLASTIC/EPOXY FBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.36 FBGA, BGA78,9X13,32
K4B2G0446C-HCF70
Samsung Semiconductor
Check for Price Yes Yes Obsolete 2.1475 Gbit 4 512MX4 1.5 V 400 ps 400 MHz 8192 MULTI BANK PAGE BURST DDR3 DRAM AUTO/SELF REFRESH COMMON 8 1 1 512000000 536.8709 M SYNCHRONOUS 3-STATE YES 8 1.575 V 1.425 V CMOS OTHER R-PBGA-B78 Not Qualified e1 3 85 °C 260 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 11 mm 7.5 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.36 BGA TFBGA, BGA78,9X13,32 78
K4B2G0846A
Samsung Semiconductor
Check for Price Obsolete DDR DRAM SAMSUNG SEMICONDUCTOR INC unknown EAR99
K4B2G0446B-HCF8T
Samsung Semiconductor
Check for Price Yes Obsolete 2.1475 Gbit 4 512MX4 1.5 V 300 ps 533 MHz 8192 DDR3 DRAM COMMON 8 512000000 536.8709 M 3-STATE 8 12 mA 210 µA CMOS OTHER R-PBGA-B78 Not Qualified e1 3 85 °C 260 78 PLASTIC/EPOXY FBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC unknown EAR99 8542.32.00.36
K4B2G0846E
Samsung Semiconductor
Check for Price Obsolete 2.1475 Gbit 8 256MX8 1.5 V MULTI BANK PAGE BURST DDR3 DRAM 1 1 256000000 268.4355 M SYNCHRONOUS CMOS R-PBGA-B78 85 °C 78 PLASTIC/EPOXY TFBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 11 mm 7.5 mm SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.36
K4B2G0446D-HCK0T
Samsung Semiconductor
Check for Price Yes Active 2.1475 Gbit 4 512MX4 1.5 V 225 ps 800 MHz 8192 DDR3 DRAM COMMON 8 512000000 536.8709 M 3-STATE 8 12 mA 130 µA CMOS OTHER R-PBGA-B78 Not Qualified 85 °C 78 PLASTIC/EPOXY FBGA BGA78,9X13,32 RECTANGULAR GRID ARRAY, FINE PITCH YES BALL 800 µm BOTTOM SAMSUNG SEMICONDUCTOR INC compliant EAR99 8542.32.00.36 FBGA, BGA78,9X13,32