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Manufacturer Part Number: k4s161622d
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K4S161622D-TE10
 Samsung Semiconductor 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 6 ns 100 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 115 µA 3.6 V 3 V CMOS OTHER R-PDSO-G50 Not Qualified e0 85 °C -25 °C 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP50,.46,32 50 compliant EAR99 8542.32.00.02
K4S161622D-TC80
 Samsung Semiconductor 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 6 ns 125 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 130 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G50 Not Qualified e0 70 °C 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 50 compliant EAR99 8542.32.00.02
K4S161622D-TP80
 Samsung Semiconductor 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 6 ns 125 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 130 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G50 Not Qualified e0 85 °C -40 °C 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP50,.46,32 50 compliant EAR99 8542.32.00.02
K4S161622D-TE60
 Samsung Semiconductor 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 5.5 ns 166 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 150 µA 3.6 V 3 V CMOS OTHER R-PDSO-G50 Not Qualified e0 85 °C -25 °C 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP50,.46,32 50 compliant EAR99 8542.32.00.02
K4S161622D-TI10
 Samsung Semiconductor 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 6 ns 100 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 115 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G50 Not Qualified e0 85 °C -40 °C 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP50,.46,32 50 compliant EAR99 8542.32.00.02
K4S161622D-TI80T
 Samsung Semiconductor 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 6 ns 125 MHz 2048 SYNCHRONOUS DRAM COMMON 1,2,4,8 1000000 1.0486 M 3-STATE 1,2,4,8,FP 2 mA 130 µA CMOS INDUSTRIAL R-PDSO-G50 Not Qualified 85 °C -40 °C 50 PLASTIC/EPOXY TSOP TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES GULL WING 800 µm DUAL SAMSUNG SEMICONDUCTOR INC TSOP, TSOP50,.46,32 unknown EAR99 8542.32.00.02
K4S161622D-TP70
 Samsung Semiconductor 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 5.5 ns 143 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 140 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G50 Not Qualified e0 85 °C -40 °C 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP50,.46,32 50 compliant EAR99 8542.32.00.02
K4S161622D-TL60
 Samsung Semiconductor 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 5.5 ns 166 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 150 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G50 Not Qualified e0 70 °C 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP50,.46,32 50 compliant EAR99 8542.32.00.02
K4S161622D-TE70
 Samsung Semiconductor 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 5.5 ns 143 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 140 µA 3.6 V 3 V CMOS OTHER R-PDSO-G50 Not Qualified e0 85 °C -25 °C 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP50,.46,32 50 compliant EAR99 8542.32.00.02
K4S161622D-TI80
 Samsung Semiconductor 		Check for Price No Obsolete 16.7772 Mbit 16 1MX16 3.3 V 6 ns 125 MHz 2048 DUAL BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 1000000 1.0486 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 130 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G50 Not Qualified e0 85 °C -40 °C 50 PLASTIC/EPOXY TSOP2 TSOP50,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 20.95 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP50,.46,32 50 compliant EAR99 8542.32.00.02
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