Parametric results for: power ldmos transistor bl... under RF Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 39

52 hits Apply

Configuration (2)

COMMON SOURCE, 2 ELEMENTS 10 SINGLE 35

52 hits Apply

DS Breakdown Voltage-Min (1)

65 V 39

52 hits Apply

Drain Current-Max (ID) (6)

11 A 6 13 A 8 32 A 8 39 A 7 49 A 12 64 A 8

Min (A) - Max (A)

52 hits Apply

METAL-OXIDE SEMICONDUCTOR 49

52 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 39

52 hits Apply

R-CDFM-F2 7 R-CDFM-F4 3 R-CDFP-F2 15 R-CDFP-F4 3 R-PDSO-F2 6 S-CDFM-F2 2 S-CQFM-F6 2 S-CQFM-X6 2

52 hits Apply

Manufacturer (2)

Ampleon 14 NXP Semiconductors 38

52 hits Apply

3 2 NOT APPLICABLE 1

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Number of Elements (2)

1 35 2 10

Min - Max

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Number of Terminals (3)

2 30 4 6 6 4

52 hits Apply

ENHANCEMENT MODE 49

52 hits Apply

200.0 °C 5 225.0 °C 25

Min (°C) - Max (°C)

52 hits Apply

CERAMIC, METAL-SEALED COFIRED 34 PLASTIC/EPOXY 6

52 hits Apply

RECTANGULAR 34 SQUARE 6

52 hits Apply

FLANGE MOUNT 16 FLATPACK 18 SMALL OUTLINE 6

52 hits Apply

Active 2 Obsolete 38 Transferred 12

52 hits Apply

Yes 11

52 hits Apply

260 4 NOT SPECIFIED 36

52 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 49

52 hits Apply

200 W 2

52 hits Apply

Surface Mount (1)

YES 44

52 hits Apply