Parametric results for: radiation hard 512x9 bit ... under FIFOs

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Organization: 512X9
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7201LA12TPG
Integrated Device Technology Inc
$5.5900 Yes Yes Transferred 4.608 kbit 9 512X9 5 V 12 ns 50 MHz 20 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS NO PARALLEL 5 mA 80 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDIP-T28 Not Qualified e3 1 70 °C 260 28 PLASTIC/EPOXY DIP DIP28,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.572 mm 34.671 mm 7.62 mm INTEGRATED DEVICE TECHNOLOGY INC PDIP GREEN, PLASTIC, DIP-28 28 PTG28 compliant EAR99 8542.32.00.71 1988-01-01
IDT7201LA50SO
Integrated Device Technology Inc
$6.1749 No No Obsolete 4.608 kbit 9 512X9 5 V 50 ns 15.38 MHz 65 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS 3-STATE NO PARALLEL 500 µA 80 µA 5.5 V 4.5 V CMOS COMMERCIAL R-PDSO-G28 Not Qualified e0 3 70 °C 225 30 28 PLASTIC/EPOXY SOP SOP28,.5 RECTANGULAR SMALL OUTLINE YES Tin/Lead (Sn85Pb15) GULL WING 1.27 mm DUAL 3.048 mm 18.3642 mm 8.763 mm INTEGRATED DEVICE TECHNOLOGY INC SOIC SOIC-28 28 not_compliant EAR99 8542.32.00.71
7201LA15TPGI
Integrated Device Technology Inc
$6.2594 Yes Yes Transferred 4.608 kbit 9 512X9 5 V 15 ns 40 MHz 25 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS 3-STATE NO PARALLEL 5 mA 80 µA 5.5 V 4.5 V CMOS INDUSTRIAL R-PDIP-T28 Not Qualified e3 85 °C -40 °C 28 PLASTIC/EPOXY DIP DIP28,.3 RECTANGULAR IN-LINE NO MATTE TIN THROUGH-HOLE 2.54 mm DUAL 4.572 mm 34.671 mm 7.62 mm INTEGRATED DEVICE TECHNOLOGY INC DIP GREEN, PLASTIC, DIP-28 28 compliant EAR99 8542.32.00.71
7281L15PAGI
Integrated Device Technology Inc
$9.5872 Yes Yes Transferred 4.608 kbit 9 512X9 5 V 15 ns 40 MHz 25 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS NO PARALLEL 15 mA 125 µA 5.5 V 4.5 V CMOS INDUSTRIAL R-PDSO-G56 Not Qualified e3 1 85 °C -40 °C 260 30 56 PLASTIC/EPOXY TSSOP TSSOP56,.3,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES MATTE TIN GULL WING 500 µm DUAL 1.2 mm 14 mm 6.1 mm INTEGRATED DEVICE TECHNOLOGY INC TSSOP TSSOP-56 56 PAG56 compliant EAR99 8542.32.00.71
7201LA15JGI
Renesas Electronics Corporation
$12.7111 Yes Yes Active 4.608 kbit 9 512X9 5 V 15 ns 40 MHz 25 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS 3-STATE NO PARALLEL 5 mA 80 µA 5.5 V 4.5 V CMOS INDUSTRIAL R-PQCC-J32 Not Qualified e3 3 85 °C -40 °C 260 30 32 PLASTIC/EPOXY QCCJ LDCC32,.5X.6 RECTANGULAR CHIP CARRIER YES Matte Tin (Sn) - annealed J BEND 1.27 mm QUAD 3.55 mm 13.97 mm 11.43 mm RENESAS ELECTRONICS CORP PLCC GREEN, PLASTIC, LCC-32 32 PLG32 compliant NLR 8542320071 Renesas Electronics
5962-8753103XA
Integrated Device Technology Inc
$17.5153 No No Transferred 4.608 kbit 9 512X9 5 V 80 ns 10 MHz 100 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS 3-STATE NO PARALLEL 900 µA 100 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.211 mm 15.24 mm INTEGRATED DEVICE TECHNOLOGY INC CDIP CERAMIC, DIP-28 28 CD28 not_compliant EAR99 8542.32.00.71 1990-01-01
7201LA50DB
Integrated Device Technology Inc
$19.5679 No No Transferred 4.608 kbit 9 512X9 5 V 50 ns 15 MHz 65 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS NO PARALLEL 900 µA 100 µA 5.5 V 4.5 V CMOS MILITARY R-GDIP-T28 Not Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 Class B 28 CERAMIC, GLASS-SEALED DIP DIP28,.6 RECTANGULAR IN-LINE NO TIN LEAD THROUGH-HOLE 2.54 mm DUAL 5.08 mm 37.211 mm 15.24 mm INTEGRATED DEVICE TECHNOLOGY INC CDIP 0.600 INCH, CERAMIC, DIP-28 28 CD28 not_compliant EAR99 8542.32.00.71 1988-01-01
5962-8753101YA
Integrated Device Technology Inc
$31.3968 No No Transferred 4.608 kbit 9 512X9 5 V 30 ns 25 MHz 40 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS 3-STATE NO PARALLEL 900 µA 100 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-N32 Not Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 32 CERAMIC, METAL-SEALED COFIRED QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD 3.048 mm 13.97 mm 11.43 mm INTEGRATED DEVICE TECHNOLOGY INC LCC CERAMIC, LCC-32 32 LC32 not_compliant EAR99 8542.32.00.71 1990-01-01
7201LA20LB
Integrated Device Technology Inc
$33.3845 No No Transferred 4.608 kbit 9 512X9 5 V 20 ns 33.33 MHz 30 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS NO PARALLEL 900 µA 140 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-N32 Not Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 Class B 32 CERAMIC, METAL-SEALED COFIRED QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD 3.048 mm 13.97 mm 11.43 mm INTEGRATED DEVICE TECHNOLOGY INC LCC LCC-32 32 LC32 not_compliant EAR99 8542.32.00.71 1988-01-01
5962-8753101YA
Renesas Electronics Corporation
$66.8244 No No Obsolete 4.608 kbit 9 512X9 5 V 30 ns 25 MHz 40 ns OTHER FIFO RETRANSMIT 1 512 512 words ASYNCHRONOUS 3-STATE NO PARALLEL 900 µA 100 µA 5.5 V 4.5 V CMOS MILITARY R-CQCC-N32 Qualified e0 1 125 °C -55 °C 240 MIL-STD-883 32 CERAMIC, METAL-SEALED COFIRED QCCN LCC32,.45X.55 RECTANGULAR CHIP CARRIER YES TIN LEAD NO LEAD 1.27 mm QUAD 3.048 mm 13.97 mm 11.43 mm RENESAS ELECTRONICS CORP LCC CERAMIC, LCC-32 32 LC32 not_compliant NLR 8542320071 Renesas Electronics