Part # | Manufacturer | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
HGTG10N120BND
DISTI #
98B1928
|
onsemi | Single Igbt, 1.2Kv, 35A, Continuous Collector Current:35A, Collector Emitter Saturation Voltage:2.45V, Power Dissipation:298W, Collector Emitter Voltage Max:1.2Kv, No. Of Pins:3Pins, Operating Temperature Max:150°C, Product Range:- Rohs Compliant: Yes |Onsemi HGTG10N120BND Min Qty: 450 Package Multiple: 1 Date Code: 0 Container: Bulk HGTG10N120BND Part Details | 0 | Buy Now HGTG10N120BND Part Details |
Part # | Manufacturer | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
Harris Semiconductor | HGTG10N120BN Part Details | 52 |
|
$1.9712 / $3.5840 | Buy Now HGTG10N120BN Part Details |
Part # | Manufacturer | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
Harris Semiconductor | HGTG10N120BND Part Details | 23 | RFQ HGTG10N120BND Part Details | |||
Harris Semiconductor | HGTG10N120BN Part Details | 65 | RFQ HGTG10N120BN Part Details |
Part # | Manufacturer | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
onsemi | HGTG10N120BND - Insulated Gate Bipolar Transistor, 35A, 1200V, N-Channel, TO-247 RoHS: Compliant Status: Obsolete Min Qty: 1 HGTG10N120BND Part Details | 1540 |
|
$1.9200 / $2.2600 | Buy Now HGTG10N120BND Part Details |