BAV103,135 vs BAV21W-GRBG feature comparison

BAV103,135 Nexperia

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BAV21W-GRBG Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer NEXPERIA TAIWAN SEMICONDUCTOR CO LTD
Part Package Code MELF
Pin Count 2
Manufacturer Package Code SOD80C
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.70
Date Of Intro 1991-04-01
Samacsys Manufacturer Nexperia
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code O-LELF-R2 R-PDSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Power Dissipation-Max 0.4 W 0.5 W
Reference Standard IEC-60134
Rep Pk Reverse Voltage-Max 250 V 250 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish TIN MATTE TIN
Terminal Form WRAP AROUND GULL WING
Terminal Position END DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Forward Voltage-Max (VF) 1 V
Non-rep Pk Forward Current-Max 2.5 A
Output Current-Max 0.2 A

Compare BAV103,135 with alternatives

Compare BAV21W-GRBG with alternatives