BAW56ST/R
vs
BAW56W,115
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Part Package Code |
SC-88
|
SC-70
|
| Package Description |
R-PDSO-G6
|
PLASTIC, SMD, SC-70, 3 PIN
|
| Pin Count |
6
|
3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Configuration |
2 BANKS, COMMON ANODE, 2 ELEMENTS
|
COMMON ANODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.715 V
|
1.25 V
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G3
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
4
|
2
|
| Number of Terminals |
6
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
0.25 A
|
0.15 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Power Dissipation-Max |
0.35 W
|
0.2 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
90 V
|
90 V
|
| Reverse Current-Max |
150 µA
|
1 µA
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Reverse Test Voltage |
80 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Base Number Matches |
1
|
1
|
| Manufacturer Package Code |
|
SOT323
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
NXP
|
| Moisture Sensitivity Level |
|
1
|
| Non-rep Pk Forward Current-Max |
|
4 A
|
|
|
|
Compare BAW56ST/R with alternatives
Compare BAW56W,115 with alternatives