BSC094N03SGAUMA1
vs
RS1E150GNTB
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
ROHM CO LTD
|
| Package Description |
SMALL OUTLINE, R-PDSO-F5
|
HSOP-8
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
|
| Avalanche Energy Rating (Eas) |
90 mJ
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
14.6 A
|
15 A
|
| Drain-source On Resistance-Max |
0.0094 Ω
|
0.0114 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-F5
|
R-PDSO-F5
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
5
|
5
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
140 A
|
60 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| Samacsys Manufacturer |
|
ROHM Semiconductor
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
Tin (Sn)
|
| Time@Peak Reflow Temperature-Max (s) |
|
10
|
|
|
|
Compare BSC094N03SGAUMA1 with alternatives
Compare RS1E150GNTB with alternatives