Part Details for BSC094N03SGAUMA1 by Infineon Technologies AG
Overview of BSC094N03SGAUMA1 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Part Details for BSC094N03SGAUMA1
BSC094N03SGAUMA1 CAD Models
BSC094N03SGAUMA1 Part Data Attributes:
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BSC094N03SGAUMA1
Infineon Technologies AG
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Datasheet
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BSC094N03SGAUMA1
Infineon Technologies AG
Power Field-Effect Transistor, 14.6A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 90 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 14.6 A | |
| Drain-source On Resistance-Max | 0.0094 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC094N03SGAUMA1
This table gives cross-reference parts and alternative options found for BSC094N03SGAUMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC094N03SGAUMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RS1E150GNTB | Power Field-Effect Transistor, 15A I(D), 30V, 0.0114ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSOP-8 | ROHM Semiconductor | BSC094N03SGAUMA1 vs RS1E150GNTB |
| AM7304N | Power Field-Effect Transistor, 16A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, DFN-8 | Analog Power | BSC094N03SGAUMA1 vs AM7304N |
| STL56N3LLH5 | N-channel 30 V, 0.0076 Ohm typ., 56 A STripFET H5 Power MOSFET in a PowerFLAT 5x6 package | STMicroelectronics | BSC094N03SGAUMA1 vs STL56N3LLH5 |
| SI7726DN-T1-GE3 | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, 1212-8, POWERPAK-8 | Vishay Intertechnologies | BSC094N03SGAUMA1 vs SI7726DN-T1-GE3 |
| SIS782DN-T1-GE3 | TRANSISTOR 16 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, 1212-8, POWERPAK-8, FET General Purpose Power | Vishay Siliconix | BSC094N03SGAUMA1 vs SIS782DN-T1-GE3 |
| SIS782DN-T1-GE3 | Power Field-Effect Transistor, 16A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1212-8, POWERPAK-8 | Vishay Intertechnologies | BSC094N03SGAUMA1 vs SIS782DN-T1-GE3 |
| DMT36M1LPS-13 | Power Field-Effect Transistor, 16A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | BSC094N03SGAUMA1 vs DMT36M1LPS-13 |