BSO301SPHXUMA1 vs HAT1055R feature comparison

BSO301SPHXUMA1 Infineon Technologies AG

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HAT1055R Renesas Electronics Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG RENESAS ELECTRONICS CORP
Part Package Code SOT SOT
Package Description SMALL OUTLINE, R-PDSO-G5 SMALL OUTLINE, R-PDSO-G8
Pin Count 8 8
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE AVALANCHE RATED
Avalanche Energy Rating (Eas) 248 mJ
Configuration SINGLE WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 60 V
Drain Current-Max (ID) 12.6 A 5 A
Drain-source On Resistance-Max 0.008 Ω 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G5 R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1 2
Number of Terminals 5 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A 40 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Power Dissipation-Max (Abs) 3 W
Transistor Application SWITCHING

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