BSS123L6327 vs BSS123 feature comparison

BSS123L6327 Infineon Technologies AG

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BSS123 Galaxy Microelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description GREEN, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.17 A 0.17 A
Drain-source On Resistance-Max 6 Ω 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6.3 pF 2.8 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.36 W 0.35 W
Power Dissipation-Max (Abs) 0.36 W 0.35 W
Qualification Status Not Qualified
Reference Standard AEC-Q101; IEC-68-1 MIL-STD-202
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 40 NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 3 6
Transistor Application SWITCHING

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