BZX85C6V2R0G vs BZX85C6V2 feature comparison

BZX85C6V2R0G Taiwan Semiconductor

Buy Now Datasheet

BZX85C6V2 Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 4 Ω 4 Ω
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e3 e3
Knee Impedance-Max 300 Ω
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.3 W 1.3 W
Reference Voltage-Nom 6.2 V 6.2 V
Reverse Current-Max 1 µA 1 µA
Reverse Test Voltage 3 V 3 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish TIN Matte Tin (Sn)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) 10
Voltage Tol-Max 5% 6.45%
Working Test Current 35 mA 35 mA
Base Number Matches 1 10
Samacsys Manufacturer Taiwan Semiconductor
Moisture Sensitivity Level 1
Voltage Temp Coeff-Max 3.41 mV/°C

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Compare BZX85C6V2 with alternatives