IPB011N04LGATMA1 vs IPB011N04LG feature comparison

IPB011N04LGATMA1 Infineon Technologies AG

Buy Now Datasheet

IPB011N04LG Infineon Technologies AG

Buy Now Datasheet
Pbfree Code No Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-263 TO-263
Package Description GREEN, PLASTIC, TO-263, 7 PIN SMALL OUTLINE, R-PSSO-G6
Pin Count 7 7
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 525 mJ 525 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 180 A 180 A
Drain-source On Resistance-Max 0.0014 Ω 0.0014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G6 R-PSSO-G6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 1260 A 1260 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Power Dissipation-Max (Abs) 250 W

Compare IPB011N04LGATMA1 with alternatives

Compare IPB011N04LG with alternatives