IPB100N04S3-03 vs IPD90N04S403ATMA1 feature comparison

IPB100N04S3-03 Infineon Technologies AG

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IPD90N04S403ATMA1 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 898 mJ 185 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 100 A 90 A
Drain-source On Resistance-Max 0.0028 Ω 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 214 W
Pulsed Drain Current-Max (IDM) 400 A 360 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Factory Lead Time 12 Weeks
Reference Standard AEC-Q101

Compare IPB100N04S3-03 with alternatives

Compare IPD90N04S403ATMA1 with alternatives