IRF7317TRPBF vs IRF7317 feature comparison

IRF7317TRPBF Infineon Technologies AG

Buy Now Datasheet

IRF7317 Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes No
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, SOP-8 SO-8
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer Infineon Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE AVALANCHE RATED
Avalanche Energy Rating (Eas) 100 mJ 100 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain-source On Resistance-Max 0.029 Ω 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 26 A 26 A
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 4
HTS Code 8541.29.00.95
Drain Current-Max (ID) 6.6 A
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 2 W
Qualification Status Not Qualified

Compare IRF7317TRPBF with alternatives

Compare IRF7317 with alternatives