IRFR010PBF
vs
IRFR010
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
DPAK-3/2
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
12 Weeks
|
|
Samacsys Manufacturer |
Vishay
|
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
50 V
|
50 V
|
Drain Current-Max (ID) |
8.2 A
|
8.2 A
|
Drain-source On Resistance-Max |
0.2 Ω
|
0.2 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
29 pF
|
|
JEDEC-95 Code |
TO-252AA
|
TO-252AA
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
25 W
|
25 W
|
Pulsed Drain Current-Max (IDM) |
33 A
|
33 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Matte Tin (Sn)
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
53 ns
|
|
Turn-on Time-Max (ton) |
67 ns
|
|
Base Number Matches |
2
|
5
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
240
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare IRFR010PBF with alternatives
Compare IRFR010 with alternatives