NTB30N06T4
vs
MTB23P06VT4
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
MOTOROLA INC
Package Description
CASE 418B-04, D2PAK-3
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Manufacturer Package Code
CASE 418B-04
Reach Compliance Code
unknown
unknown
Avalanche Energy Rating (Eas)
101 mJ
794 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
27 A
23 A
Drain-source On Resistance-Max
0.042 Ω
0.12 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
235
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
80 A
81 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Feedback Cap-Max (Crss)
210 pF
Operating Temperature-Max
175 °C
Power Dissipation Ambient-Max
90 W
Turn-off Time-Max (toff)
200 ns
Turn-on Time-Max (ton)
230 ns
Compare NTB30N06T4 with alternatives
Compare MTB23P06VT4 with alternatives