NTB45N06T4G vs MTB50N06VLT4 feature comparison

NTB45N06T4G onsemi

Buy Now Datasheet

MTB50N06VLT4 onsemi

Buy Now Datasheet
Pbfree Code Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer ONSEMI ON SEMICONDUCTOR
Part Package Code D2PAK 2 LEAD
Package Description D2PAK-3 D2PAK-3
Pin Count 3 3
Manufacturer Package Code 418B-04
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 240 mJ 265 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 45 A 42 A
Drain-source On Resistance-Max 0.026 Ω 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 235
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W 125 W
Pulsed Drain Current-Max (IDM) 150 A 147 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code No

Compare NTB45N06T4G with alternatives

Compare MTB50N06VLT4 with alternatives