Part Details for NTB45N06T4G by onsemi
Overview of NTB45N06T4G by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for NTB45N06T4G
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
10N9712
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Newark | N Channel Mosfet, 60V, 45A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:45A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Onsemi NTB45N06T4G Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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Bristol Electronics | 62 |
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RFQ | ||
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Bristol Electronics | 5 |
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RFQ | ||
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Bristol Electronics | Min Qty: 2 | 140 |
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$1.3068 / $2.8000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 45A I(D), 60V, 0.026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 112 |
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$1.7500 / $3.7500 | Buy Now |
Part Details for NTB45N06T4G
NTB45N06T4G CAD Models
NTB45N06T4G Part Data Attributes:
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NTB45N06T4G
onsemi
Buy Now
Datasheet
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Compare Parts:
NTB45N06T4G
onsemi
Single N-Channel Power MOSFET 60V, 45A, 26mΩ, D2PAK 2 LEAD, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | D2PAK 2 LEAD | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 418B-04 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 240 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 45 A | |
| Drain-source On Resistance-Max | 0.026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NTB45N06T4G
This table gives cross-reference parts and alternative options found for NTB45N06T4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTB45N06T4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NTB45N06T4 | Single N-Channel Power MOSFET 60V, 45A, 26mΩ, D2PAK 2 LEAD, 800-REEL | onsemi | NTB45N06T4G vs NTB45N06T4 |
| NTBV45N06T4G | Power MOSFET 60V, 45A, 28 mOhm, Single N-Channe,l D2PAK, Logic Level., D2PAK 2 LEAD, 800-REEL, Automotive Qualified | onsemi | NTB45N06T4G vs NTBV45N06T4G |
| NTB45N06G | Single N-Channel Power MOSFET 60V, 45A, 26mΩ, D2PAK 2 LEAD, 50-TUBE | onsemi | NTB45N06T4G vs NTB45N06G |